HP 8GB (1x8GB) PC3L-12800R 2Rx4 Server Memory

Product Code: 715283-001

This product is for use in servers only. Looking for Desktop Memory or Laptop Memory instead?

HP 8GB (1x8GB) PC3L-12800R 2Rx4 Server Memory
HP 8GB (1x8GB) PC3L-12800R 2Rx4 Server Memory HP 8GB (1x8GB) PC3L-12800R 2Rx4 Server Memory

HP 8GB (1x8GB) PC3L-12800R 2Rx4 Server Memory

Product Code: 715283-001
  • Brand: HP
  • Capacity: 8GB
  • Memory Type: PC3L-12800R
  • DDR: DDR3
  • Speed: 1600MHz
  • Rank: 2Rx4
  • Low Voltage: Yes
  • Data Integrity: ECC
  • CAS Latency: 11
  • Form Factor: 240 Pin
  • Compatible With: Servers & workstations
We regularly ship to over 100 countries worldwide
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£19.75 ex. VAT £23.70 Inc. VAT

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Surpass Server Potential This HP 8GB, PC3L-12800R, dual rank server memory kit runs at a speed of 1600MHz and a bandwidth rate of 12800MB/s, making sure that operations are smooth, and intensive tasks, carried out at rapid pace. For over 70 years HP have developed a world- class reputation, consumer- centric strategy for providing the highest quality products with maximum reliability.

DDR3: The Leading Memory Upgrade DDR3 has received major improvements in two of the most critical areas relating to server memory performance, power usage, and speed. DDR3 has been bestowed with twice the speed of its predecessor, DDR2. Prefetch length being raised from 4 to 8 bits ensures that informational transactions across the data bus a swift and succinct. The enhanced power consumption efficiencies, enabled by the weakened voltage levels from 1.8v-1.9v to 1.5v makes sure that DDR3 is more resourceful as well as high- performing.

Avoid Unprotected Data Avoid unprotected data with the assistance of ECC (error- protecting code). With productivity and output being so closely intertwined with system uptime, ECC represents a critical layer of security in stimulating this. ECC automates the process of detecting and correcting the most common types of internal data corruptions. This server memory kit is registered (buffered) the register is located between the DRAM modules where constancy is provided to the individual modules, then feeding through to the overall system, further enhancing productive output.

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